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UNISONIC TECHNOLOGIES CO., LTD 18N40
400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 18N40 is a 400V N-channel Power MOSFET, providing customers with perfect RDS(ON), low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in PWM applications.
Power MOSFET
FEATURES
* RDS(ON) 408m @VGS = 10 V * Ultra Low Gate Charge: 50nC (TYP.) * Low Reverse Transfer ( CRSS = typical 23pF ) * Fast Switching Speed * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen-Free 18N40L-T47-T 18N40G-T47-T Package TO-247 1 G Pin Assignment 2 3 D S Packing Tube
www.unisonic.com.tw
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Copyright (c) 2010 Unisonic Technologies Co., Ltd
18N40
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage (TC =25, unless otherwise specified)
Power MOSFET
SYMBOL RATINGS UNIT VDSS 400 V VGSS 30 V Continuous ID 18 A Drain Current Pulsed IDM 45 A Avalanche Current IAR 18 A Single Pulsed EAS 1000 mJ Avalanche Energy 30 mJ Repetitive EAR Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation PD 360 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction to Case SYMBOL JC RATINGS 0.35 UNIT /W
ELECTRICAL CHARACTERISTICS (TJ =25C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A Drain-Source Leakage Current IDSS VDS=400V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=9A (Note) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=0.5VDSS, Gate Source Charge QGS ID=18A, RG=5 (External) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=0.5VDSS, ID=9A Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IF=IS ,VGS=0V (Note) Maximum Continuous Drain-Source IS VGS=0V Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Repetitive Forward Current Reverse Recovery Time tRR VGS=0V, dIF/dt=100A/s, IS=18A, VR=100V Reverse Recovery Charge QRR Note: Pulse Test: Pulse Width 300s, Duty Cycle 2%. MIN 400 25 100 2.0 4.0 200 2500 280 23 50 15 18 21 22 62 22 1.5 18 54 200 0.8 TYP MAX UNIT V A nA V m pF pF pF nC nC nC ns ns ns ns V A A ns C
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
2 of 3 QW-R502-389.A
18N40
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current vs. Source to Drain Voltage 12 10 Drain Current,ID (A) 8 6 4 2 0 0 400 600 200 800 1000 Source to Drain Voltage,VSD (mV) 12 10 Drain Current, ID (A) 8 6 4 2 0 0
Drain-Source On-State Resistance Characteristics VGS=10V, ID=9.0A
2.0 1.5 1.0 0.5 Drain to Source Voltage, VDS (V) Drain Current vs. Drain-Source Breakdown Voltage
Drain Current vs. Gate Threshold Voltage 300 Drain Current,ID (A) 250 Drain Current,ID (A) 0 2 3 1 4 Gate Threshold Voltage,VTH (V) 200 150 100 50 0 300 250 200 150 100 50 0
200 100 300 400 500 0 Drain-Source Breakdown Voltage,BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
3 of 3 QW-R502-389.A

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